Manufacturer:
Current - Average Rectified (Io):
Operating Temperature - Junction:
Reverse Recovery Time (trr):
Image Part Manufacturer Description MOQ Stock Action
FESB8BT-E3/45 Vishay
DIODE GEN PURP 100V 8A TO263AB
1,000
6,500
In-stock
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BYWB29-100-E3/45 Vishay
DIODE GEN PURP 100V 8A TO263AB
1,000
6,500
In-stock
Get Quote
BYWB29-100HE3_A/P Vishay
DIODE GEN PURP 100V 8A TO263AB
1,000
6,500
In-stock
Get Quote
FESB8BT-E3/81 Vishay
DIODE GEN PURP 100V 8A TO263AB
800
6,500
In-stock
Get Quote
FESB8BTHE3_A/I Vishay
DIODE GEN PURP 100V 8A TO263AB
1,600
6,500
In-stock
Get Quote
FESB8BTHE3_A/P Vishay
DIODE GEN PURP 100V 8A TO263AB
2,000
6,500
In-stock
Get Quote
BYWB29-100-E3/81 Vishay
DIODE GEN PURP 100V 8A TO263AB
800
6,500
In-stock
Get Quote
FESB16BT-E3/45 Vishay
DIODE GEN PURP 100V 16A TO263AB
1,000
6,500
In-stock
Get Quote
BYWB29-100HE3_A/I Vishay
DIODE GEN PURP 100V 8A TO263AB
800
6,500
In-stock
Get Quote
FESB16BT-E3/81 Vishay
DIODE GEN PURP 100V 16A TO263AB
800
6,500
In-stock
Get Quote
FESB16BTHE3_A/I Vishay
DIODE GEN PURP 100V 16A TO263AB
1,600
6,500
In-stock
Get Quote
FESB16BTHE3_A/P Vishay
DIODE GEN PURP 100V 16A TO263AB
2,000
6,500
In-stock
Get Quote
SFAS802G MNG Taiwan Semiconductor
DIODE GEN PURP 100V 8A TO263AB
1
6,500
In-stock
Get Quote
SFAS802GHMNG Taiwan Semiconductor
DIODE GEN PURP 100V 8A TO263AB
1
6,500
In-stock
Get Quote
SFS1602G MNG Taiwan Semiconductor
DIODE GEN PURP 100V 16A TO263AB
1
6,500
In-stock
Get Quote
SFS1602GHMNG Taiwan Semiconductor
DIODE GEN PURP 100V 16A TO263AB
1
6,500
In-stock
Get Quote
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