Manufacturer:
Capacitance @ Vr, F:
Current - Average Rectified (Io):
Operating Temperature - Junction:
Reverse Recovery Time (trr):
Supplier Device Package:
Voltage - DC Reverse (Vr) (Max):
Image Part Manufacturer Description MOQ Stock Action
MURS360S-E3/5BT Vishay
DIODE GEN PURP 600V 3A DO214AA
1
9,400
In-stock
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ES3JBHR5G Taiwan Semiconductor
DIODE GEN PURP 600V 3A DO214AA
1
2,711
In-stock
Get Quote
MURS340SHE3_A/I Vishay
DIODE GEN PURP 400V 1.5A DO214AA
1
1
In-stock
Get Quote
ES3HB R5G Taiwan Semiconductor
DIODE GEN PURP 500V 3A DO214AA
1
6,800
In-stock
Get Quote
ES3JB R5G Taiwan Semiconductor
DIODE GEN PURP 600V 3A DO214AA
1
155
In-stock
Get Quote
MURS360S-E3/52T Vishay
DIODE GEN PURP 600V 3A DO214AA
1
6,500
In-stock
Get Quote
MURS340S-E3/52T Vishay
DIODE GEN PURP 400V 3A DO214AB
1
6,500
In-stock
Get Quote
MURS340S-M3/5BT Vishay
DIODE GEN PURP 400V 3A DO214AA
6,400
6,500
In-stock
Get Quote
MURS360S-M3/5BT Vishay
DIODE GEN PURP 600V 3A DO214AA
6,400
6,500
In-stock
Get Quote
MURS360S-M3/52T Vishay
DIODE GEN PURP 600V 3A DO214AA
6,000
6,500
In-stock
Get Quote
MURS340S-E3/5BT Vishay
DIODE GEN PURP 400V 3A DO214AB
3,200
6,500
In-stock
Get Quote
MURS340SHE3_A/H Vishay
DIODE GEN PURP 400V 1.5A DO214AA
2,250
6,500
In-stock
Get Quote
MURS360SHE3_A/H Vishay
DIODE GEN PURP 600V 1.5A DO214AA
2,250
6,500
In-stock
Get Quote
MURS360SHE3_A/I Vishay
DIODE GEN PURP 600V 1.5A DO214AA
3,200
6,500
In-stock
Get Quote
ES3JB Taiwan Semiconductor
DIODE GEN PURP 600V 3A DO214AA
6,000
6,500
In-stock
Get Quote
ES3JBH Taiwan Semiconductor
DIODE GEN PURP 600V 3A DO214AA
6,000
6,500
In-stock
Get Quote
ES3HB Taiwan Semiconductor
DIODE GEN PURP 500V 3A DO214AA
6,000
6,500
In-stock
Get Quote
MURS340SHE3/5BT Vishay
DIODE GEN PURP 400V 3A DO214AB
1
6,500
In-stock
Get Quote
MURS360SHE3/5BT Vishay
DIODE GEN PURP 600V 3A DO214AA
1
6,500
In-stock
Get Quote
MURS340SHE3/52T Vishay
DIODE GEN PURP 400V 3A DO214AB
1
6,500
In-stock
Get Quote
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