Current - Average Rectified (Io):
Current - Reverse Leakage @ Vr:
Diode Type:
Operating Temperature - Junction:
Reverse Recovery Time (trr):
Supplier Device Package:
Voltage - DC Reverse (Vr) (Max):
Voltage - Forward (Vf) (Max) @ If:
Image Part Manufacturer Description MOQ Stock Action
1SS427,L3M Toshiba Electronic Devices and Storage Corporation
DIODE GEN PURP 80V 100MA SOD923
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LXS201-143-5 Microchip Technology
SI SCHOTTKY NON HERMETIC PLASTIC
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